Research Article
Block Textured a-Si:H Solar Cell
Table 2
Process conditions of a-Si:H solar cell by PECVD.
| | Layer | Temperature (°C) | Electrode distance
(mils) | Working pressure
(Torr) | RF power (W) | Gas |
| | N-type | 250 | 1000 | 1.5 | 10 | SiH4, H2, PH3 | | Intrinsic | 250 | 1000 | 1.0 | 10 | SiH4, H2 | | P-type | 250 | 1000 | 1.5 | 10 | SiH4, H2, B2H6 |
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