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International Journal of Photoenergy
Volume 2015, Article ID 154574, 6 pages
Research Article

Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron-Boron Related Complexes in Silicon

1State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2Department of Solid State Sciences, Ghent University, Krijgslaan 281 S1, 9000 Ghent, Belgium

Received 24 April 2015; Accepted 28 June 2015

Academic Editor: Yanfa Yan

Copyright © 2015 Xiaodong Zhu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The behavior of iron, iron-boron (FeB) pairs, and iron-boron-phosphorus (FeB-P) complexes has been studied in B-doped Czochralski silicon with phosphorus (P) compensation and compared with that in uncompensated material. The interstitial iron concentration has been measured at temperatures from 50 to 270°C. The apparent binding energy () of FeB in compensated silicon is (0.25 ± 0.03) eV, significantly lower than the (0.53 ± 0.02) eV in uncompensated silicon. Possible reasons for this reduction in binding energy are discussed by experimental and calculation methods. The results are important for understanding and controlling the behavior of Fe in compensated silicon.