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International Journal of Photoenergy
Volume 2015, Article ID 193892, 13 pages
Research Article

Laser Enhanced Hydrogen Passivation of Silicon Wafers

1School of Photovoltaic and Renewable Energy Engineering, UNSW, Sydney, NSW 2052, Australia
2School of Mechanical and Manufacturing Engineering, UNSW, Sydney, NSW 2052, Australia

Received 19 December 2014; Revised 6 March 2015; Accepted 13 March 2015

Academic Editor: Xuegong Yu

Copyright © 2015 Lihui Song et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The application of lasers to enable advanced hydrogenation processes with charge state control is explored. Localised hydrogenation is realised through the use of lasers to achieve localised illumination and heating of the silicon material and hence spatially control the hydrogenation process. Improvements in minority carrier lifetime are confirmed in the laser hydrogenated regions using photoluminescence (PL) imaging. However with inappropriate laser settings a localised reduction in minority carrier lifetime can result. It is observed that high illumination intensities and rapid cooling are beneficial for achieving improvements in minority carrier lifetimes through laser hydrogenation. The laser hydrogenation process is then applied to finished screen-printed solar cells fabricated on seeded-cast quasi monocrystalline silicon wafers. The passivation of dislocation clusters is observed with clear improvements in quantum efficiency, open circuit voltage, and short circuit current density, leading to an improvement in efficiency of 0.6% absolute.