Laser Enhanced Hydrogen Passivation of Silicon Wafers

Figure 5

The temperature profile of the central point of the sample in Figure 4 with the time simulated by the numerical model. The input parameters were laser scan speeds at 6 mm/s, laser power densities at 4.08 × 10³ W/cm², and substrate temperatures at 300 K. The temperature was nearly uniform across the thickness of the sample.