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International Journal of Photoenergy
Volume 2015 (2015), Article ID 326850, 10 pages
http://dx.doi.org/10.1155/2015/326850
Research Article

Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell

Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, and School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, China

Received 12 June 2014; Revised 26 November 2014; Accepted 19 December 2014

Academic Editor: Serap Gunes

Copyright © 2015 Ningning Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Hrishikesh Bhunia, Biswajit Kundu, Soumyo Chatterjee, and Amlan J. Pal, “Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-a-vis Fermi energy measured through scanning t,” Journal Of Materials Chemistry C, vol. 4, no. 3, pp. 551–558, 2016. View at Publisher · View at Google Scholar
  • Emrah Sarica, and Vildan Bilgin, “Study of some physical properties of ultrasonically spray deposited silver doped lead sulphide thin films,” Materials Science in Semiconductor Processing, vol. 68, pp. 288–294, 2017. View at Publisher · View at Google Scholar