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International Journal of Photoenergy
Volume 2015, Article ID 519386, 8 pages
Research Article

Correlation of Interfacial Transportation Properties of CdS/CdTe Heterojunction and Performance of CdTe Polycrystalline Thin-Film Solar Cells

College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China

Received 11 April 2015; Accepted 7 September 2015

Academic Editor: Lu Li

Copyright © 2015 Guanggen Zeng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS) were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 microns and large electric field intensity of ~1.3 V/μm allow the sufficient energy-band bending close to CdS layer at CdS/CdTe heterojunction, which changes the carrier transportation mechanism from emission to diffusion and leads to the optimal rectifying characteristics with small dark saturation current density ~6.4 × 10−10 A/cm2. As a result, the schematic diagram of heterojunction band structure corresponding to various performances of solar cells has also been presented.