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International Journal of Photoenergy
Volume 2015, Article ID 594858, 9 pages
Research Article

Design and Simulation of InGaN - Junction Solar Cell

1Laboratoire LIMOSE, Université M’hamed Bougara de Boumerdès, 35000 Boumerdès, Algeria
2Unité de Développement des Equipements Solaires (UDES), Centre de Développement des Energies Renouvelables (CDER), Route Nle No. 11, BP 386, Bou Ismaïl, 42415 Tipaza, Algeria
3Laboratoire d’Électronique Quantique, Faculté de Physique, USTHB, BP 32, El Alia, Bab Ezzouar, 16111 Alger, Algeria

Received 21 March 2015; Revised 17 May 2015; Accepted 17 June 2015

Academic Editor: Elias Stathatos

Copyright © 2015 A. Mesrane et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In0.622Ga0.378N (Eg = 1.39 eV) solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm2, and 300 K), the following electrical parameters:  mA/cm2, volts, FF = 86.2343%, and %. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In0.622Ga0.378N solar cell efficiency was inversely proportional with the temperature.