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International Journal of Photoenergy
Volume 2015 (2015), Article ID 841614, 8 pages
Research Article

Enhancement of Spectral Response in -:H Thin-Film Solar Cells with a-Si:H/c-Si:H P-Type Window Layers

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

Received 28 July 2014; Accepted 3 November 2014

Academic Editor: Salvatore Lombardo

Copyright © 2015 Yen-Tang Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The hydrogenated amorphous silicon (a-Si:H)/hydrogenated microcrystalline silicon (c-Si:H) double p-type window layer has been developed and applied for improving microcrystalline silicon-germanium p-i-n single-junction thin-film solar cells deposited on textured SnO2:F-coated glass substrates. The substrates of SnO2:F, SnO2:F/c-Si:H(p), and SnO2:F/a-Si:H(p) were exposed to H2 plasma to investigate the property change. Our results showed that capping a thin layer of a-Si:H(p) on SnO2:F can minimize the Sn reduction during the deposition process which had H2-containing plasma. Optical measurement has also revealed that a-Si:H(p) capped SnO2:F glass had a higher optical transmittance. When the 20 nm c-Si:H(p) layer was replaced by a 3 nm a-Si:H(p)/17 nm c-Si:H(p) double window layer in the cell, the conversion efficiency () and the short-circuit current density () were increased by 16.6% and 16.4%, respectively. Compared to the standard cell with the 20 nm c-Si:H(p) window layer, an improved conversion efficiency of 6.19% can be obtained for the cell having a-Si:H(p)/c-Si:H(p) window layer, with  = 490 mV,  = 19.50 mA/cm2, and FF = 64.83%.