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International Journal of Photoenergy
Volume 2015 (2015), Article ID 961812, 9 pages
Research Article

New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

1Département de Physique, Faculté des Sciences, Université de Yaoundé 1, BP 812, Yaoundé, Cameroon
2Laboratoire des Matériaux et Environnement (LAME), UFR-SEA, Université de Ouagadougou, BP 7021, Ouaga 03, Burkina Faso

Received 24 June 2015; Accepted 30 August 2015

Academic Editor: Zhibin Yu

Copyright © 2015 A. Teyou Ngoupo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters of J-V characteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdT/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdT () and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdT/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm) of CdT layer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.