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International Journal of Photoenergy
Volume 2016 (2016), Article ID 1217576, 7 pages
Research Article

Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

1NTT Institute of Hi-Technology, Nguyen Tat Thanh University, Ho Chi Minh City 70000, Vietnam
2Thin Film Solar Cells Laboratory, Department of Chemical Engineering, National Taiwan University of Science and Technology (NTUST), Taipei City 106, Taiwan
3Ho Chi Minh City University of Natural Resources and Environment (HCMUNRE), Ho Chi Minh City 70000, Vietnam

Received 6 April 2016; Accepted 15 May 2016

Academic Editor: Prakash Basnyat

Copyright © 2016 Long Giang Bach et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.