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International Journal of Photoenergy
Volume 2016 (2016), Article ID 3095758, 7 pages
http://dx.doi.org/10.1155/2016/3095758
Research Article

Study of Transition Region of p-Type SiO:H as Window Layer in a-Si:H/a-SiGe:H Multijunction Solar Cells

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Received 27 May 2016; Revised 3 July 2016; Accepted 10 July 2016

Academic Editor: Yi Zhang

Copyright © 2016 Pei-Ling Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have studied the p-type hydrogenated silicon oxide (:H) films prepared in the amorphous-to-microcrystalline transition region as a window layer in a-Si:H/a-:H multijunction solar cells. By increasing the -to- flow ratio () from 10 to 167, the :H(p) films remained amorphous and exhibited an increased hydrogen content from 10.2% to 12.2%. Compared to the amorphous :H(p) film prepared at low , the :H(p) film deposited at of 167 exhibited a higher bandgap of 2.04 eV and a higher conductivity of 1.15 × 10−5 S/cm. With the employment of :H(p) films prepared by increasing from 10 to 167 in a-Si:H single-junction cell, the FF improved from 65% to 70% and the efficiency increased from 7.4% to 8.7%, owing to the enhanced optoelectrical properties of :H(p) and the improved p/i interface. However, the cell that employed :H(p) film with over 175 degraded the p/i interface and degraded the cell performance, which were arising from the onset of crystallization in the window layer. Compared to the cell using standard a-:H(p), the a-Si:H/a-:H tandem cells employing :H(p) deposited with of 167 showed an improved efficiency from 9.3% to 10.3%, with of 1.60 V, of 9.3 mA/cm2, and FF of 68.9%.