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International Journal of Photoenergy
Volume 2016, Article ID 3095758, 7 pages
http://dx.doi.org/10.1155/2016/3095758
Research Article

Study of Transition Region of p-Type SiO:H as Window Layer in a-Si:H/a-SiGe:H Multijunction Solar Cells

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

Received 27 May 2016; Revised 3 July 2016; Accepted 10 July 2016

Academic Editor: Yi Zhang

Copyright © 2016 Pei-Ling Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. K. L. Chopra, P. D. Paulson, and V. Dutta, “Thin-film solar cells: an overview,” Progress in Photovoltaics: Research and Applications, vol. 12, no. 2-3, pp. 69–92, 2004. View at Publisher · View at Google Scholar · View at Scopus
  2. A. V. Shah, H. Schade, M. Vanecek et al., “Thin-film silicon solar cell technology,” Progress in Photovoltaics: Research and Applications, vol. 12, no. 2-3, pp. 113–142, 2004. View at Publisher · View at Google Scholar · View at Scopus
  3. M. A. Green, “Third generation photovoltaics: ultra-high conversion efficiency at low cost,” Progress in Photovoltaics: Research and Applications, vol. 9, no. 2, pp. 123–135, 2001. View at Publisher · View at Google Scholar · View at Scopus
  4. O. Isabella, A. H. M. Smets, and M. Zeman, “Thin-film silicon-based quadruple junction solar cells approaching 20% conversion efficiency,” Solar Energy Materials and Solar Cells, vol. 129, pp. 82–89, 2014. View at Publisher · View at Google Scholar · View at Scopus
  5. M. Stutzmann, R. A. Street, C. C. Tsai, J. B. Boyce, and S. E. Ready, “Structural, optical, and spin properties of hydrogenated amorphous silicon‐germanium alloys,” Journal of Applied Physics, vol. 66, no. 2, pp. 569–592, 1989. View at Publisher · View at Google Scholar · View at Scopus
  6. E. Maruyama, S. Okamoto, A. Terakawa, W. Shinohara, M. Tanaka, and S. Kiyama, “Toward stabilized 10% efficiency of large-area (> 5000 cm2) a-Si/a-SiGe tandem solar cells using high-rate deposition,” Solar Energy Materials and Solar Cells, vol. 74, no. 1–4, pp. 339–349, 2002. View at Publisher · View at Google Scholar · View at Scopus
  7. S. Okamoto, E. Maruyama, A. Terakawa et al., “Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells,” Solar Energy Materials and Solar Cells, vol. 66, no. 1–4, pp. 85–94, 2001. View at Publisher · View at Google Scholar · View at Scopus
  8. A. Banerjee, “Study of top contact/p-layer junction for the optimization of large-area amorphous silicon multijunction cells,” Solar Energy Materials and Solar Cells, vol. 36, no. 3, pp. 295–299, 1995. View at Publisher · View at Google Scholar · View at Scopus
  9. R. Biron, C. Pahud, F.-J. Haug, J. Escarré, K. Söderström, and C. Ballif, “Window layer with p doped silicon oxide for high VOC thin-film silicon n-i-p solar cells,” Journal of Applied Physics, vol. 110, no. 12, Article ID 124511, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. Y. Hattori, D. Kruangam, T. Toyama, H. Okamoto, and Y. Hamakawa, “Valency control of P-type a-SiC: H having the optical band gap more than 2.5 eV by electron-cyclotron resonance CVD (ECR CVD),” Journal of Non-Crystalline Solids, vol. 1079, pp. 97–98, 1987. View at Google Scholar
  11. A. Sarker and A. K. Barua, “Development of high quality p-type hydrogenated amorphous silicon oxide film and its use in improving the performance of single junction amorphous silicon solar cells,” Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 41, no. 2, pp. 765–769, 2002. View at Publisher · View at Google Scholar · View at Scopus
  12. S. Inthisang, T. Krajangsang, I. A. Yunaz, A. Yamada, M. Konagai, and C. R. Wronski, “Fabrication of high open-circuit voltage a-Si1−xOx:H solar cells by using p-a-Si1−xOx:H as window layer,” Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 10, pp. 2990–2993, 2011. View at Publisher · View at Google Scholar · View at Scopus
  13. S. Guha, J. Yang, A. Banerjee, B. Yan, and K. Lord, “High quality amorphous silicon materials and cells grown with hydrogen dilution,” Solar Energy Materials & Solar Cells, vol. 78, no. 1–4, pp. 329–347, 2003. View at Publisher · View at Google Scholar · View at Scopus
  14. S. Guha, J. Yang, D. L. Williamson, Y. Lubianiker, J. D. Cohen, and A. H. Mahan, “Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity,” Applied Physics Letters, vol. 74, no. 13, pp. 1860–1862, 1999. View at Publisher · View at Google Scholar · View at Scopus
  15. S. Inthisang, K. Sriprapha, S. Miyajima, A. Yamada, and M. Konagai, “Hydrogenated amorphous silicon oxide solar cells fabricated near the phase transition between amorphous and microcrystalline structures,” Japanese Journal of Applied Physics, vol. 48, no. 12, Article ID 122402, 2009. View at Publisher · View at Google Scholar · View at Scopus
  16. C. R. Wronski and R. W. Collins, “Phase engineering of a-Si:H solar cells for optimized performance,” Solar Energy, vol. 77, no. 6, pp. 877–885, 2004. View at Publisher · View at Google Scholar · View at Scopus
  17. J. Tauc, “Optical properties and electronic structure of amorphous Ge and Si,” Materials Research Bulletin, vol. 3, no. 1, pp. 37–46, 1968. View at Publisher · View at Google Scholar · View at Scopus
  18. S. Y. Myong, K. Sriprapha, S. Miyajima, M. Konagai, and A. Yamada, “High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer,” Applied Physics Letters, vol. 90, no. 26, Article ID 263509, 2007. View at Publisher · View at Google Scholar · View at Scopus
  19. Y. Hishikawa, “Raman study on the variation of the silicon network of a-Si:H,” Journal of Applied Physics, vol. 62, no. 8, pp. 3150–3155, 1987. View at Publisher · View at Google Scholar · View at Scopus
  20. R. L. C. Vink, G. T. Barkema, and W. F. van der Weg, “Raman spectra and structure of amorphous Si,” Physical Review B, vol. 63, no. 11, Article ID 115210, 2001. View at Google Scholar · View at Scopus
  21. J. Y. Ahn, K. H. Jun, K. S. Lim, and M. Konagai, “Stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime,” Applied Physics Letters, vol. 82, no. 11, pp. 1718–1720, 2003. View at Publisher · View at Google Scholar · View at Scopus
  22. A. Asano, “Effects of hydrogen atoms on the network structure of hydrogenated amorphous and microcrystalline silicon thin films,” Applied Physics Letters, vol. 56, no. 6, pp. 533–535, 1990. View at Publisher · View at Google Scholar · View at Scopus
  23. S. M. Iftiquar, “The roles of deposition pressure and rf power in opto-electronic properties of a-SiOx:H films,” Journal of Physics D: Applied Physics, vol. 31, no. 14, pp. 1630–1641, 1998. View at Publisher · View at Google Scholar · View at Scopus
  24. G. Lucovsky, J. Yang, S. S. Chao, J. E. Tyler, and W. Czubatyj, “Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films,” Physical Review B, vol. 28, no. 6, pp. 3225–3233, 1983. View at Publisher · View at Google Scholar · View at Scopus
  25. C. C. Tsai, G. B. Anderson, R. Thompson, and B. Wacker, “Control of silicon network structure in plasma deposition,” Journal of Non-Crystalline Solids, vol. 114, no. 1, pp. 151–153, 1989. View at Publisher · View at Google Scholar · View at Scopus
  26. D. Das, S. M. Iftiquar, D. Das, and A. K. Barua, “Improvement in the optoelectronic properties of a-SiO:H films,” Journal of Materials Science, vol. 34, no. 5, pp. 1051–1054, 1999. View at Publisher · View at Google Scholar · View at Scopus
  27. S. Fujikake, H. Ohta, A. Asano, Y. Ichikawa, and H. Sakai, “High quality a-SiO:H films and their application to a-Si solar cells,” Material Research Society Symposium Proceedings, vol. 258, p. 875, 1992. View at Publisher · View at Google Scholar
  28. K. Prasad, U. Kroll, F. Finger et al., “Highly conductive microcrystalline silicon layers for tunnel junctions in stacked amorphous silicon based solar cells,” Material Research Society Symposium Proceedings, vol. 219, p. 469, 1991. View at Publisher · View at Google Scholar
  29. C. B. Roxlo, B. Abeles, and T. Tiedje, “Evidence for lattice-mismatch—induced defects in amorphous semiconductor heterojunctions,” Physical Review Letters, vol. 52, no. 22, pp. 1994–1997, 1984. View at Publisher · View at Google Scholar · View at Scopus