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International Journal of Photoenergy
Volume 2016, Article ID 6157905, 5 pages
Research Article

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

1Department of Physics, Faculty of Sciences, Muğla Sıtkı Koçman University, 48170 Muğla, Turkey
2Department of Energy Engineering, Faculty of Engineering, Karamanoğlu Mehmetbey University, 70100 Karaman, Turkey
3Department of Physics, Faculty of Arts and Sciences, Batman University, 72000 Batman, Turkey

Received 6 January 2016; Accepted 24 February 2016

Academic Editor: Mahmoud M. El-Nahass

Copyright © 2016 Şadan Özden et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique onto p-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80–320 K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height () values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80 K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.