Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/<i>p</i>-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

<div>Temperature dependencies of experimental <svg height="12.3916pt" id="M30" style="vertical-align:-3.42948pt" version="1.1" viewbox="-0.0498162 -8.96212 12.0102 12.3916" width="12.0102pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M542 242C542 369 469 429 379 468C370 472 372 496 376 513L416 681L400 691L344 648L219 51C167 69 113 128 113 217C113 324 166 387 266 428L252 459C124 418 23 336 23 202C23 95 90 13 205 -8L182 -132C165 -222 191 -254 209 -261L215 -258L270 -7C415 -4 542 98 542 242ZM469 232C469 126 403 33 279 39L355 409C399 394 469 331 469 232Z" id="g113-243"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="565" vert-adv-y="565"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.02,3.132)"><path d="M460 334C460 396 434 451 378 451C330 451 241 408 148 300H146L237 679C241 697 241 710 232 710C213 710 153 684 67 675L66 646H95C141 646 145 642 134 595L39 170C23 97 31 54 46 33C64 8 100 -12 137 -12C178 -12 234 3 298 43C391 101 460 222 460 334ZM371 320C371 204 316 89 248 51C230 41 208 37 192 37C143 37 102 72 119 166C124 194 129 215 135 235C202 323 298 392 335 392C353 392 371 372 371 320Z" id="g50-99"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="478" vert-adv-y="478"></glyph.data></g></svg> and <svg height="6.1673pt" id="M31" style="vertical-align:-0.2063904pt" version="1.1" viewbox="-0.0498162 -5.96091 6.6501 6.1673" width="6.6501pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M495 86L479 114C446 82 419 66 409 66C401 66 401 72 406 97C420 166 436 231 453 297C489 435 454 448 428 448C406 448 384 439 354 422C305 394 222 327 161 247H159L183 345C200 415 194 448 173 448C143 448 82 410 23 351L38 325C64 349 95 371 105 371C111 371 116 365 109 336L25 -4L31 -12C50 -4 77 3 107 9C119 69 132 122 145 168C197 254 321 381 370 381C387 381 393 374 378 305L329 95C309 17 320 -12 345 -12C372 -12 430 19 495 86Z" id="g113-111"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="502" vert-adv-y="502"></glyph.data></g></svg> values obtained from current versus voltage characteristics of Al/poly(4-vinyl phenol)/<i>p</i>-GaAs structure between 80 and 320 K.</div>

International Journal of Photoenergy

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Figure 3

Figure 3: Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/<i>p</i>-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method 

International Journal of Photoenergy

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

Figure 3