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International Journal of Photoenergy
Volume 2016, Article ID 8032709, 9 pages
http://dx.doi.org/10.1155/2016/8032709
Research Article

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

1School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China
2State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China
3Yingli Green Energy Holding Co., Ltd., Baoding, Hebei 071051, China

Received 7 December 2015; Accepted 7 March 2016

Academic Editor: Yanfa Yan

Copyright © 2016 Zaoyang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Zaoyang Li, Lijun Liu, Yunfeng Zhang, and Genshu Zhou, “Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots,” International Journal of Photoenergy, vol. 2016, Article ID 8032709, 9 pages, 2016. https://doi.org/10.1155/2016/8032709.