Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Figure 2

Sheet resistance uniformity within a wafer after diffusion. BSG boron concentration is 6.72 × 10²¹ cm⁻³. Diffusion was performed at 950°C for 20 min. The BSG film was deposited on a 156 × 156 mm² pseudo square silicon wafer.