Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

Figure 9

(a) Simulation error in depth at the same boron concentration. (b) is a list of examined BSG boron concentration, diffusion temperature, and time. Even though wide range of the conditions was used, the error is almost within 15%. It is confirmed that the simulator DADiS is accurate and useful for the boron diffusion analysis.

(a)

(b)