Hole-Transporting Layer Treatment of Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 14.5%

<div>Reflectance spectra of n-Si/PEDOT:PSS samples annealed at different temperatures from 160°C to 190°C, and the reflectance spectrum of the polished bare n-Si is also shown for a reference.</div>

International Journal of Photoenergy

fig5

Figure 5

Figure 5: Hole-Transporting Layer Treatment of Planar Hybrid n-Si/PEDOT:PSS Solar Cells with Power Conversion Efficiency up to 14.5% 