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International Journal of Photoenergy
Volume 2018 (2018), Article ID 7215843, 10 pages
https://doi.org/10.1155/2018/7215843
Research Article

Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

1Department of Electronics and Telecommunications, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
2Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
3Istituto di Elettronica e di Ingegneria dell’Informazione e delle Telecomunicazioni (IEIIT), Consiglio Nazionale delle Ricerche (CNR), Corso Duca degli Abruzzi 24, 10129 Torino, Italy

Correspondence should be addressed to F. Cappelluti; ti.otilop@itulleppac.aciredef

Received 9 June 2017; Accepted 23 November 2017; Published 18 February 2018

Academic Editor: Urs Aeberhard

Copyright © 2018 A. P. Cédola et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the macroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic conversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost. Experimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is explained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects.