Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

Figure 3

Current density versus voltage characteristics measured under one-sun illumination (AM 1.5 G) for the reference GaAs bulk cell (R2), undoped QDSC (R3), and two-doped (14 e/dot) QDSC with interdot spacing of about 20 nm (R4) and 25 nm (R5).