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International Journal of Photoenergy
Volume 2018, Article ID 7215843, 10 pages
https://doi.org/10.1155/2018/7215843
Research Article

Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

1Department of Electronics and Telecommunications, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
2Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
3Istituto di Elettronica e di Ingegneria dell’Informazione e delle Telecomunicazioni (IEIIT), Consiglio Nazionale delle Ricerche (CNR), Corso Duca degli Abruzzi 24, 10129 Torino, Italy

Correspondence should be addressed to F. Cappelluti; ti.otilop@itulleppac.aciredef

Received 9 June 2017; Accepted 23 November 2017; Published 18 February 2018

Academic Editor: Urs Aeberhard

Copyright © 2018 A. P. Cédola et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. Hubbard and R. Raffaelle, “Boosting solar-cell efficiency with quantum-dot-based nanotechnology,” SPIE Newsroom, 2010. View at Publisher · View at Google Scholar
  2. A. Luque and A. Martí, “Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels,” Physical Review Letters, vol. 78, no. 26, pp. 5014–5017, 1997. View at Publisher · View at Google Scholar
  3. S. Asahi, H. Teranishi, K. Kusaki, T. Kaizu, and T. Kita, “Two-step photon up-conversion solar cells,” Nature Communications, vol. 8, p. 14962, 2017. View at Publisher · View at Google Scholar · View at Scopus
  4. D. M. Tex, I. Kamiya, and Y. Kanemitsu, “Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells,” Scientific Reports, vol. 4, p. 4125, 2014. View at Publisher · View at Google Scholar · View at Scopus
  5. U. Aeberhard, “Simulation of nanostructure-based high-efficiency solar cells: challenges, existing approaches, and future directions,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 19, no. 5, pp. 1–11, 2013. View at Publisher · View at Google Scholar · View at Scopus
  6. M. Y. Levy and C. Honsberg, “Solar cell with an intermediate band of finite width,” Physical Review B, vol. 78, no. 16, article 165122, 2008. View at Publisher · View at Google Scholar · View at Scopus
  7. L. Cuadra, A. Marti, and A. Luque, “Influence of the overlap between the absorption coefficients on the efficiency of the intermediate band solar cell,” IEEE Transactions on Electron Devices, vol. 51, no. 6, pp. 1002–1007, 2004. View at Publisher · View at Google Scholar · View at Scopus
  8. R. Strandberg and T. Reenaas, “Optimal filling of the intermediate band in idealized intermediate-band solar cells,” IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2559–2565, 2011. View at Publisher · View at Google Scholar · View at Scopus
  9. V. Aroutiounian, S. Petrosyan, A. Khachatryan, and K. Touryan, “Quantum dot solar cells,” Journal of Applied Physics, vol. 89, no. 4, pp. 2268–2271, 2001. View at Google Scholar
  10. A. S. Lin and J. D. Phillips, “Drift-diffusion modeling for impurity photovoltaic devices,” IEEE Transactions on Electron Devices, vol. 56, no. 12, pp. 3168–3174, 2009. View at Publisher · View at Google Scholar · View at Scopus
  11. K. Yoshida, Y. Okada, and N. Sano, “Self-consistent simulation of intermediate band solar cells: effect of occupation rates on device characteristics,” Applied Physics Letters, vol. 97, no. 13, p. 133503, 2010. View at Publisher · View at Google Scholar · View at Scopus
  12. I. Tobías, A. Luque, and A. Martí, “Numerical modeling of intermediate band solar cells,” Semiconductor Science and Technology, vol. 26, no. 1, article 014031, 2011. View at Publisher · View at Google Scholar · View at Scopus
  13. R. Strandberg and T. Reenaas, “Drift-diffusion model for intermediate band solar cells including photofilling effects,” Progress in Photovoltaics, vol. 19, no. 1, pp. 21–32, 2012. View at Publisher · View at Google Scholar · View at Scopus
  14. V. Aroutiounian, S. Petrosyan, and A. Khachatryan, “Studies of the photocurrent in quantum dot solar cells by the application of a new theoretical model,” Solar Energy Materials and Solar Cells, vol. 89, no. 2, pp. 165–173, 2005. View at Publisher · View at Google Scholar · View at Scopus
  15. M. Gioannini, A. P. Cedola, N. Di Santo, F. Bertazzi, and F. Cappelluti, “Simulation of quantum dot solar cells including carrier intersubband dynamics and transport,” IEEE Journal of Photovoltaics, vol. 3, no. 4, pp. 1271–1278, 2013. View at Publisher · View at Google Scholar · View at Scopus
  16. M. Gioannini, A. P. Cedola, and F. Cappelluti, “Impact of carrier dynamics on the photovoltaic performance of quantum dot solar cells,” IET Optoelectronics, vol. 9, no. 2, pp. 69–74, 2015. View at Publisher · View at Google Scholar · View at Scopus
  17. T. Sogabe, Q. Shen, and K. Yamaguchi, “Recent progress on quantum dot solar cells: a review,” Journal of Photonics for Energy, vol. 6, no. 4, article 040901, 2016. View at Publisher · View at Google Scholar · View at Scopus
  18. F. Cappelluti, M. Gioannini, and A. Khalili, “Impact of doping on InAs/GaAs quantum-dot solar cells: a numerical study on photovoltaic and photoluminescence behavior,” Solar Energy Materials and Solar Cells, vol. 157, pp. 209–220, 2016. View at Publisher · View at Google Scholar · View at Scopus
  19. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures, John Wiley & Sons, 1999.
  20. G. Jolley, L. Fu, H. F. Lu, H. H. Tan, and C. Jagadish, “The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells,” Progress in Photovoltaics, 2012. View at Publisher · View at Google Scholar · View at Scopus
  21. G. A. Kosinovsky, “Threshold current and modulation response of semiconductor lasers,” 1995. View at Google Scholar
  22. T. R. Nielsen, P. Gartner, and F. Jahnke, “Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers,” Physical Review B, vol. 69, no. 23, article 235314, 2004. View at Publisher · View at Google Scholar · View at Scopus
  23. G. A. Narvaez, G. Bester, and A. Zunger, “Carrier relaxation mechanisms in self-assembled (In, Ga) As/Ga As quantum dots: efficient PS Auger relaxation of electrons,” Physical Review B, vol. 74, no. 7, article 075403, 2006. View at Publisher · View at Google Scholar · View at Scopus
  24. K. Schuh, P. Gartner, and F. Jahnke, “Combined influence of carrier-phonon and coulomb scattering on the quantum-dot population dynamics,” Physical Review B, vol. 87, no. 3, article 035301, 2013. View at Publisher · View at Google Scholar · View at Scopus
  25. S. Tomić, “Intermediate-band solar cells: influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays,” Physical Review B, vol. 82, no. 19, article 195321, 2010. View at Publisher · View at Google Scholar · View at Scopus
  26. J. Siegert, S. Marcinkevičius, and Q. X. Zhao, “Carrier dynamics in modulation-doped InAs/GaAs quantum dots,” Physical Review B, vol. 72, no. 8, 2005. View at Publisher · View at Google Scholar · View at Scopus
  27. F. Cappelluti, A. Khalili, and M. Gioannini, “Open circuit voltage recovery in quantum dot solar cells: a numerical study on the impact of wetting layer and doping,” IET Optoelectronics, vol. 11, no. 2, pp. 44–48, 2017. View at Publisher · View at Google Scholar · View at Scopus
  28. P. W. Fry, J. J. Finley, L. R. Wilson et al., “Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots,” Applied Physics Letters, vol. 77, no. 26, pp. 4344–4346, 2000. View at Publisher · View at Google Scholar
  29. T. Müller, F. Schrey, G. Strasser, and K. Unterrainer, “Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum dots,” Applied Physics Letters, vol. 18, no. 17, pp. 3572–3574, 2003. View at Publisher · View at Google Scholar · View at Scopus
  30. L. A. Pettersson, L. S. Roman, and O. Inganäs, “Modeling photocurrent action spectra of photovoltaic devices based on organic thin films,” Journal of Applied Physics, vol. 86, no. 1, pp. 487–496, 1999. View at Publisher · View at Google Scholar
  31. F. Bertazzi, F. Cappelluti, S. D. Guerrieri, F. Bonani, and G. Ghione, “Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 4, pp. 1611–1618, 2006. View at Publisher · View at Google Scholar · View at Scopus
  32. D. Kim, M. Tang, J. Wu et al., “Si-doped InAs/GaAs quantum-dot solar cell with AlAs cap layers,” IEEE Journal of Photovoltaics, vol. 6, no. 4, pp. 906–911, 2016. View at Publisher · View at Google Scholar · View at Scopus
  33. H. Y. Liu, I. R. Sellers, T. J. Badcock et al., “Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer,” Applied Physics Letters, vol. 85, no. 5, pp. 704–706, 2004. View at Publisher · View at Google Scholar · View at Scopus
  34. H. Y. Liu, S. L. Liew, T. Badcock et al., “p-doped 1.3μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency,” Applied Physics Letters, vol. 89, no. 7, article 073113, 2006. View at Publisher · View at Google Scholar · View at Scopus
  35. F. K. Tutu, I. R. Sellers, M. G. Peinado et al., “Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer,” Journal of Applied Physics, vol. 111, no. 4, article 046101, 2012. View at Publisher · View at Google Scholar · View at Scopus
  36. M. Wolf and H. Rauschenbach, “Series resistance effects on solar cell measurements,” Advanced Energy Conversion, vol. 3, no. 2, pp. 455–479, 1963. View at Publisher · View at Google Scholar
  37. H. L. Wang, F. H. Yang, and S. L. Feng, “Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots,” Journal of Crystal Growth, vol. 212, no. 1-2, pp. 35–38, 2000. View at Publisher · View at Google Scholar · View at Scopus
  38. A. Markus, M. Rossetti, V. Calligari, J. Chen, and A. Fiore, “Role of thermal hopping and homogeneous broadening on the spectral characteristics of quantum dot lasers,” Journal of Applied Physics, vol. 98, no. 10, article 104506, 2005. View at Publisher · View at Google Scholar · View at Scopus
  39. M. P. Lumb, M. A. Steiner, J. F. Geisz, and R. J. Walters, “Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells,” Journal of Applied Physics, vol. 116, no. 19, article 194504, 2014. View at Publisher · View at Google Scholar · View at Scopus
  40. A. Musu, F. Cappelluti, T. Aho, V. Polojärvi, T. K. Niemi, and M. Guina, “Nanostructures for light management in thin-film GaAs quantum dot solar cells,” in Solid-State Lighting, no. article JW4A.45, Optical Society of America, 2016. View at Google Scholar
  41. Sopra database. 1995-2016 Software Spectra, Inc., http://sspectra.com/sopra.html.
  42. C. G. Bailey, D. V. Forbes, R. P. Raffaelle, and S. M. Hubbard, “Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells,” Applied Physics Letters, vol. 98, no. 16, article 163105, 2011. View at Publisher · View at Google Scholar · View at Scopus
  43. P. Lam, S. Hatch, J. Wu et al., “Voltage recovery in charged InAs/GaAs quantum dot solar cells,” Nano Energy, vol. 6, pp. 159–166, 2014. View at Publisher · View at Google Scholar · View at Scopus
  44. S. J. Polly, D. V. Forbes, K. Driscoll, S. Hellstrom, and S. M. Hubbard, “Delta-doping effects on quantum-dot solar cells,” IEEE Journal of Photovoltaics, vol. 4, no. 4, pp. 1079–1085, 2014. View at Publisher · View at Google Scholar · View at Scopus
  45. S. Sanguinetti, D. Colombo, M. Guzzi et al., “Carrier thermodynamics in InAs/InxGa1−xAs quantum dots,” Physical Review B, vol. 74, no. 20, article 205302, 2006. View at Publisher · View at Google Scholar · View at Scopus
  46. T. Kita, R. Hasagawa, and T. Inoue, “Suppression of nonradiative recombination process in directly Si-doped InAs/GaAs quantum dots,” Journal of Applied Physics, vol. 110, no. 10, article 103511, 2011. View at Publisher · View at Google Scholar · View at Scopus