Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

Table 1

Photovoltaic parameters extracted from the measured J − V characteristics in Figure 3.

Device	Jsc, mA/cm^2	Voc, V	FF, %
R2, REF GaAs cell	13.37	0.942	59.7
R3, undoped QD	14.42	0.778	62.7
R4, doped QD	11.74	0.894	61.1
R5, doped QD	12.70	0.868	63.1