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International Journal of Photoenergy
Volume 2018, Article ID 8545207, 8 pages
https://doi.org/10.1155/2018/8545207
Research Article

The Reduced Recombination and the Enhanced Lifetime of Excited Electron in QDSSCs Based on Different ZnS and SiO2 Passivation

1Faculty of Physics, Dong Thap University, Dong Thap Province, Cao Lanh City, Vietnam
2Ho Chi Minh City University of Science, Ho Chi Minh City, Vietnam
3Vietnam National University, Ho Chi Minh City, Vietnam

Correspondence should be addressed to Ha Thanh Tung; nv.ude.uhtd@gnutth

Received 10 January 2018; Revised 24 February 2018; Accepted 6 March 2018; Published 8 April 2018

Academic Editor: Guohua Wu

Copyright © 2018 Ha Thanh Tung et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ha Thanh Tung, Nguyen Thu Thao, and Lam Quang Vinh, “The Reduced Recombination and the Enhanced Lifetime of Excited Electron in QDSSCs Based on Different ZnS and SiO2 Passivation,” International Journal of Photoenergy, vol. 2018, Article ID 8545207, 8 pages, 2018. https://doi.org/10.1155/2018/8545207.