Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

<div>Overall variation in the electrical properties of the deposited films of different Ti doping concentrations: (a) resistivity; (b) carrier concentration; (c) Hall mobility.</div>

International Journal of Photoenergy

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Figure 5

Figure 5: Performance Analysis of Ti-Doped In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 

Figure 5 | Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device 