Role of Interfacial Oxide Layer in MoO_x/n-Si Heterojunction Solar Cells

Table 2

(a) Photovoltaic characteristics of the MoO_x/-Si solar cells with different band gaps of the SiO_x(Mo)1 layer

Band gap of SiOx(Mo)1 (eV)	(mV)	(mA‧cm^-2)	FF (%)	(%)
2.28	581.1	35.73	81.67	16.96
2.30	581.1	35.72	81.45	16.91
2.32	581.2	35.72	80.97	16.81
2.34	581.3	35.71	79.94	16.59

(b) Photovoltaic characteristics of the MoO_x/-Si solar cells with different affinities of the SiO_x(Mo)1 layer

Affinity of SiOx(Mo)1 (eV)	(mV)	(mA‧cm^-2)	FF (%)	(%)
3.45	581.1	35.72	81.81	16.98
3.50	581.1	35.72	81.45	16.91
3.55	581.3	35.72	79.10	16.43
3.60	582.6	35.72	68.99	14.36