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Silicon Based Heterojunction Solar Cells

Call for Papers

The advantage of hetero p-n junction solar cells is the liberty to choose material, layer thickness, dopant concentrations, and inherent surface passivation, as well as a low temperature approach. The fundamental challenge in the heterojunction solar cells is to avoid recombination due to interface states, which is mostly addressed by inserting a buffer layer. The key to the success of heterojunction solar cells lies in the separation of highly recombination-active contacts from the crystalline semiconductor surface by the insertion of a passivating semiconductor film with a wider bandgap.

The most standard type of heterojunction solar cell uses hydrogenated amorphous silicon (a-Si:H) to create a-Si:H(n,p)/c-Si(p,n) structure. Another emerging type of heterojunction solar cell is n-ZnO/p-Si heterojunction solar cell, in which ZnO can be exploited as an electrically active n-layer as well as an antireflection coating that can reduce fabrication cost and complexity. ITO/Si is another Si based heterojunction solar cell that exploits ITO emitters to transmit solar radiation directly to the active Si substrate with little or no attenuation. Both ZnO and ITO are low-cost environment-friendly materials. GaP is a promising candidate to replace a-Si in a Si based heterojunction solar cell. The modeling investigation indicates that a record single junction performance could be achieved by utilizing carrier selective contacts and replacing a-Si with a lattice matched wide bandgap III-V material such as GaP. Schottky diode solar cell is another type of heterojunction solar cell in which an interface between a metal and a semiconductor provides the band-bending for charge separation. The most popular type of Schottky diode solar cell is Graphene/Si. The power conversion efficiency of Graphene/Si solar cell has dramatically improved from 1.65% in 2010 to 10.93% in 2016.

This special issue will consider original research and review articles reporting theoretical, simulation, or experimental study related to single heterojunction solar cells. The experimental papers may report initial material fabrication and characterization results or complete device fabrication and characterization results. The editors especially welcome review articles which describe the state-of-the-art single heterojunction solar cell technologies.

Potential topics include but are not limited to the following:

  • a-Si/c-Si or HIT solar cells
  • ZnO/Si heterojunction solar cells
  • ITO/Si heterojunction solar cells
  • GaP/Si heterojunction solar cells
  • Graphene/Si and other Schottky diode solar cells

Authors can submit their manuscripts through the Manuscript Tracking System at https://mts.hindawi.com/submit/journals/ijp/hesol/.

Submission DeadlineFriday, 14 June 2019
Publication DateNovember 2019

Papers are published upon acceptance, regardless of the Special Issue publication date.

Lead Guest Editor

Guest Editors