International Journal of Photoenergy

Solid-State Lighting with High Brightness, High Efficiency, and Low Cost


Publishing date
04 Jul 2014
Status
Published
Submission deadline
14 Feb 2014

Lead Editor

1Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan

2Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 100044, China

3Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan

4Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA


Solid-State Lighting with High Brightness, High Efficiency, and Low Cost

Description

Recently, with the awakening of global ecoconsciousness, the issue of waste pollution from the conventional lighting has attracted wide attention. To achieve the advanced lighting with the energy-saving and environmental protection capabilities, the technologies of solid-state lighting have been developed rapidly. In all solid-state lighting applications, light-emitting diode (LED) is the most popular technique due to its advantages, for example, the small volume, the long lifetime, the high reliability, the low power consumption, and the nonpollution. Up to now, the nitride-based materials are maturely developed to apply for LED applications. However, to obtain the LED devices with high brightness, high efficiency, and low cost, there are still some techniques to be improved, especially for the nitride-epilayer growth with low defect density and device fabrication with high heat dissipation.

We invite investigators to submit original research articles and review articles that will propose the continuing efforts in the techniques of LEDs with high brightness, high efficiency, and low cost. We are particularly interested in papers describing the new methods of nitride-epilayer growth and thermally conductive device to enhance the optoelectronic performance of LEDs. Potential topics include, but are not limited to:

  • Development in patterned sapphire substrate techniques to achieve high-quality nitride epilayer and device
  • Development in defect-density reduction of nitride epilayer by inserting the buffer
  • LEDs embedded with the nanoscale structure to enhance the epilayer quality and device performance
  • Development in defect-etching technique on nitride epilayer
  • Improvement in the heat dissipation of LED devices by inserting new materials with high thermal conductivity
  • Advanced package methods of LED devices to reach high dissipation and high efficiency
  • Recent advances in GaN-on-Si: from growth to LED devices
  • Recent advances in ultraviolet LEDs (UV-LEDs) technology

Before submission authors should carefully read over the journal’s Author Guidelines, which are located at http://www.hindawi.com/journals/ijp/guidelines/. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/ijp/bright/ according to the following timetable:


Articles

  • Special Issue
  • - Volume 2014
  • - Article ID 278263
  • - Editorial

Solid-State Lighting with High Brightness, High Efficiency, and Low Cost

Ray-Hua Horng | Kei May Lau | ... | Nelson Tansu
  • Special Issue
  • - Volume 2014
  • - Article ID 959620
  • - Research Article

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators

Lung-Chien Chen | Chih-Hung Hsu | ... | Jia-Ren Wu
  • Special Issue
  • - Volume 2014
  • - Article ID 385257
  • - Research Article

Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

Yen-Chih Chiang | Bing-Cheng Lin | ... | Hao-Chung Kuo
  • Special Issue
  • - Volume 2014
  • - Article ID 574270
  • - Research Article

Implementation and Test of a LED-Based Lamp for a Lighthouse

Luca Mercatelli | David Jafrancesco | ... | Paola Sansoni
  • Special Issue
  • - Volume 2014
  • - Article ID 621789
  • - Research Article

Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

Yu-An Chen | Cheng-Huang Kuo | ... | Ji-Pu Wu
  • Special Issue
  • - Volume 2014
  • - Article ID 829284
  • - Research Article

Thermal Characteristics of InGaN/GaN Flip-Chip Light Emitting Diodes with Diamond-Like Carbon Heat-Spreading Layers

Pai-Yang Tsai | Hou-Kuei Huang | ... | Yeong-Her Wang
  • Special Issue
  • - Volume 2014
  • - Article ID 407239
  • - Research Article

Color Rendering Index Thermal Stability Improvement of Glass-Based Phosphor-Converted White Light-Emitting Diodes for Solid-State Lighting

Chun-Chin Tsai
International Journal of Photoenergy
 Journal metrics
Acceptance rate46%
Submission to final decision64 days
Acceptance to publication34 days
CiteScore3.000
Impact Factor1.880
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