On the Use of Magnetic RAMs in Field-Programmable Gate Arrays

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<g transform="matrix(.017,-0,0,-.017,2.9,7.675)"><path d="M538 96q-38 -45 -84 -76.5t-71 -31.5q-44 0 -15 117q12 49 18 89h-2q-99 -128 -163 -178q-36 -28 -70 -28q-26 0 -44 38h-2q-16 -69 -16 -129q0 -43 11 -75.5t24 -42.5l1 -6q-7 -12 -24.5 -23t-37.5 -11q-40 0 -40 76q0 52 35 202l94 407l78 24l5 -5q-32 -122 -72 -310
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CMOS technology combined with the MTJ-TAS magnetic postprocess.</table>

International Journal of Reconfigurable Computing

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Figure 19

Figure 19: On the Use of Magnetic RAMs in Field-Programmable Gate Arrays 