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International Journal of Reconfigurable Computing
Volume 2015 (2015), Article ID 749816, 10 pages
http://dx.doi.org/10.1155/2015/749816
Research Article

Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region

Department of Electrical and Electronics Engineering, BITS, Pilani, Rajasthan 333031, India

Received 2 June 2015; Accepted 16 August 2015

Academic Editor: Martin Margala

Copyright © 2015 Priya Gupta et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Priya Gupta, Anu Gupta, and Abhijit Asati, “Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region,” International Journal of Reconfigurable Computing, vol. 2015, Article ID 749816, 10 pages, 2015. doi:10.1155/2015/749816