Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region

Table 2

and values of each transistor at the end of read operation at voltage difference of 70 mV between BL and BLB.

Device
MP1	mV	mV
MP2	mV	mV
MP3
MP4	mV	mV
MN1	mV	mV
MN2	mV	mV
MN3	mV	mV
MN4	mV	mV