Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region

Table 3

Comparison of various SRAM cells at 45 nm technology.

References	Types of cell	SINM	WTI	SVNM	RSNM	WSNM	Standby power	Area	Comments
		(μA)	(μA)	(mV)	(mV)	(mV)	(nW)	(μm^2)
[11]	4T	—	—	—	—	—	7510.0	1.987	Not working
[12]	5T	—	—	—	—	—	1360.0	2.960	Not working
[13]	5T (2)	7	−28	200	80	129	2.04	3.011	Poor RSNM
[14]	6T (2)	6	−32	150	50	150	2.04	4.186	Poor SINM
[15]	6T	10	−4	210	34	90	5.77	3.824	Poor WTI
[16]	7T	11	−26	200	—	—	2.99	4.977	RSNM/WSNM not found
[17]	8T	6	−3	250	40	53	3770.0	6.279	Poor WTI
[18]	10T	6	−5.5	230	80	50	1682.0	7.989	Poor results
MPT8T	8T	12	−28	210	120	218	2.01	5.986	Best results among all expect area