Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

Figure 1

10 K PL spectra of InAs/GaAs (113) quantum dot capped by GaAs epilayer (a) and InGaAs epilayers (b).

(a)

(b)