International Journal of Spectroscopy / 2011 / Article / Fig 1

Research Article

Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

Figure 1

10 K PL spectra of InAs/GaAs (113) quantum dot capped by GaAs epilayer (a) and InGaAs epilayers (b).
527642.fig.001a
(a)
527642.fig.001b
(b)

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