Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy
Figure 5
The OPM observed for c–Si and various Si films; (a) spectra of the c–Si(100) bulk, SPC pol-Si, and ELC poly-Si, with the intensity normalized with the peak height, (b) spectrum of a–Si, (c) spectrum of SPC poly-Si heated at 580°C for 3 h, and (c) the spectrum of cat-CVD nanocrystalline Si. Thin lines are curves for fitting with Gaussian and Lorentzian function.
