Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy
Figure 6
The lower-frequency peak shifts of the OPM are plotted as a function of the FWHM for c–Si, SPC poly-Si, and ELC poly-Si. ELC was performed with an energy density between 200 and 400 mJ/cm2, which are shown with open circles. The curve is the value given in [13]. The magnitude of due to thermal stress is also shown as “thermal stress (cal.).” “ELC-p” indicates the ELC film with hillocks and ridges removed by mechanochemical polishing.
