Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

<table>Area intensity of the OPM for c–Si <svg height="15.05" id="M44" style="vertical-align:-2.30685pt" version="1.1" viewbox="0 0 36.400002 15.05" width="36.400002" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> bulk, ELC poly-Si, and SPC poly-Si. The intensity is normalized with that of the c–Si.</table>

International Journal of Spectroscopy

fig7

Figure 7

Figure 7: Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy 