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International Journal of Spectroscopy
Volume 2014 (2014), Article ID 194563, 9 pages
http://dx.doi.org/10.1155/2014/194563
Research Article

Understanding and Control of High Temperature Oxidation Flaws of Low-Density Poly(ethylene) with Raman Spectroscopy

1Total Raffinage Chimie, Plateforme de Carling-Saint Avold, 57508 Saint-Avold, France
2Laboratoire Matériaux Optiques Photonique et Systèmes (LMOPS), Université de Lorraine, 57070 Metz, France
3Supélec, Laboratoire Matériaux Optiques Photonique et Systèmes (LMOPS), 57070 Metz, France

Received 26 January 2014; Revised 17 March 2014; Accepted 3 May 2014; Published 5 June 2014

Academic Editor: Rolf W. Berg

Copyright © 2014 Marie Veitmann et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Studies of high temperature oxidation of polyethylene are not much present in the literature though it can really be a problem especially in polymer production and processing. This study aims to detect oxidation flaws in polyethylene and to determine their impact on polymer structure and properties. Besides, we suggest a method via PLS-regression to determine the degree of flaws that can occur during polymer processing due to oxidation. Several kinds of oxidation flaws were reproduced in laboratory at 150°C in an oven operating in air and Raman spectroscopy analysis was performed on each sample. Using statistical tools as chemometrics on these spectra, we have built a Partial Least Square (PLS) model able to predict the oxidation degree of flaws. Interpretation of the model construction and further characterization tests show that oxidation can be followed with the evolution of the crystalline carbon group and of the created carbonyl functions. Finally we suggest possible mechanisms which can explain the high temperature oxidation process in LPDE, and we link them to the modification of the material properties.