Table of Contents
International Journal of Superconductivity
Volume 2015 (2015), Article ID 273570, 9 pages
Research Article

Spin Flows in Magnetic Semiconductor/Insulator/Superconductor Tunneling Junction

Department of Electrical and Electronic System Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya, Tochigi 321-8585, Japan

Received 18 December 2014; Accepted 25 March 2015

Academic Editor: Zongqing Ma

Copyright © 2015 Michihide Kitamura and Akinobu Irie. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Tunneling currents along the c-axis of the majority and minority spin electrons have been studied for a magnetic semiconductor (MS)/insulator (I)/superconductor (S) tunneling junction consisting of a Ga1−xMnxAs with x = 1/32, a nonmagnetic with a realistic dimension, and a (Hg-1223) high- S. The normalized charge and spin currents, and , and the flows of the majority and minority spin electrons, and , have been calculated at a fixed external voltage , as a function of the magnetic moment μ′   per a Mn atom which is deduced from the band structure calculations. It is found that the tunneling due to the minority spin electron dominates when , but such a phenomenon is not found for . We have pointed out that the present tunneling junction seems to work as a switching device in which the ↑ and ↓ spin flows can be easily controlled by the external magnetic field.