Table of Contents
ISRN Nanotechnology
Volume 2011 (2011), Article ID 639714, 3 pages
Research Article

Stacking Fault Energy of Si Nanocrystals Embedded in SiO𝟐

1The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071, China
2Group of Ion Implantation, INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, QC, Canada J3X 1S2

Received 16 February 2011; Accepted 4 April 2011

Academic Editors: M. Cazzanelli, G. A. Kachurin, and D. Tsoukalas

Copyright © 2011 Y. Q. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Si nanocrystals (Si nc) were produced by the implantation of Si+ into a SiO2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) observation has shown that a perfect dislocation (Burgers vector 𝐛=(1/2)110) can dissociate into two Shockley partials (Burgers vector 𝐛=(1/6)112) bounding a strip of stacking faults (SFs). The width of the SFs has been determined from the HRTEM image, and the stacking fault energy for Si nc has been calculated. The stacking fault energy for Si nc is compared with that for bulk Si, and the formation probability of defects in Si nc is also discussed. The results will shed a light on the dissociation of dislocations in nanoparticles.