Table of Contents
ISRN Nanotechnology
Volume 2011 (2011), Article ID 639714, 3 pages
http://dx.doi.org/10.5402/2011/639714
Research Article

Stacking Fault Energy of Si Nanocrystals Embedded in SiO𝟐

1The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071, China
2Group of Ion Implantation, INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, QC, Canada J3X 1S2

Received 16 February 2011; Accepted 4 April 2011

Academic Editors: M. Cazzanelli, G. A. Kachurin, and D. Tsoukalas

Copyright © 2011 Y. Q. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. L. N. Dinh, L. L. Chase, M. Balooch, W. J. Siekhaus, and F. Wooten, “Optical properties of passivated Si nanocrystals and SiO2 nanostructures,” Physical Review B, vol. 54, no. 7, pp. 5029–5037, 1996. View at Google Scholar · View at Scopus
  2. T. Shimizu-Iwayama, N. Kurumado, D. E. Hole, and P. D. Townsend, “Optical properties of silicon nanoclusters fabricated by ion implantation,” Journal of Applied Physics, vol. 83, no. 11, pp. 6018–6022, 1998. View at Google Scholar · View at Scopus
  3. G. E. Abrosimova and A. S. Aronin, “The fine structure of FCC nanocrystals in Al- and Ni-based alloys,” Physics of the Solid State, vol. 44, no. 6, pp. 1003–1007, 2002. View at Publisher · View at Google Scholar · View at Scopus
  4. Y. Q. Wang, R. Smirani, and G. G. Ross, “Nanotwinning in silicon nanocrystals produced by ion implantation,” Nano Letters, vol. 4, no. 10, pp. 2041–2045, 2004. View at Publisher · View at Google Scholar · View at Scopus
  5. Y. Q. Wang, R. Smirani, and G. G. Ross, “The effect of implantation dose on the microstructure of silicon nanocrystals in SiO2,” Nanotechnology, vol. 15, no. 11, pp. 1554–1560, 2004. View at Publisher · View at Google Scholar · View at Scopus
  6. Y. Q. Wang, T. Li, W. S. Liang, X. F. Duan, and G. G. Ross, “Dislocations in Si nanocrystals embedded in SiO2,” Nanotechnology, vol. 20, no. 31, Article ID 315704, pp. 1–4, 2009. View at Google Scholar
  7. Y. Q. Wang, R. Smirani, and G. G. Ross, “Stacking faults in Si nanocrystals,” Applied Physics Letters, vol. 86, no. 22, Article ID 221920, 3 pages, 2005. View at Publisher · View at Google Scholar
  8. J. P. Hirth and J. Lothe, Theory of Dislocations, Wiley, New York, NY, USA, 1982.
  9. I. Kovács and L. Zsoldos, Dislocations and Plastic Deformation, Pergamon Press, Oxford, UK, 1973.
  10. F. Häussermann and H. Schaumburg, “Extended dislocations in germanium,” Philosophical Magazine, vol. 27, no. 3, pp. 745–751, 1973. View at Publisher · View at Google Scholar
  11. I. L. F. Ray and D. J. H. Cockayne, “The dissociation of dislocations in silicon,” Proceedings of the Royal Society A, vol. 325, pp. 543–554, 1971. View at Publisher · View at Google Scholar
  12. A. Olsen and J. C. H. Spence, “Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy,” Philosophical Magazine A, vol. 43, no. 4, pp. 945–965, 1981. View at Google Scholar · View at Scopus
  13. J. L. Demenet, P. Grosbras, H. Garem, and J. C. Desoyer, “Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations,” Philosophical Magazine A, vol. 59, no. 3, pp. 501–518, 1989. View at Google Scholar · View at Scopus
  14. S. Takeuchi and K. Suzuki, “Stacking fault energies of tetrahedrally coordinated crystals,” Physica Status Solidi A, vol. 171, no. 1, pp. 99–103, 1999. View at Google Scholar · View at Scopus
  15. A. George and J. Rabier, “Dislocations and plasticity in semiconductors. I. Dislocation structures and dynamics,” Revue de Physique Appliquée, vol. 22, no. 9, pp. 941–966, 1987. View at Publisher · View at Google Scholar
  16. B. Joós, Q. Ren, and M. S. Duesbery, “Peierls-Nabarro model of dislocations in silicon with generalized stacking-fault restoring forces,” Physical Review B, vol. 50, no. 9, pp. 5890–5898, 1994. View at Publisher · View at Google Scholar · View at Scopus
  17. E. Aerts, P. Delavignette, R. Siems, and S. Amelinckx, “Stacking fault energy in silicon,” Journal of Applied Physics, vol. 33, no. 10, pp. 3078–3080, 1962. View at Publisher · View at Google Scholar · View at Scopus
  18. J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” Journal of Applied Physics, vol. 80, no. 4, pp. 2105–2112, 1996. View at Google Scholar · View at Scopus