Densification and Microstructural Evolutions during Reaction Sintering of SiC-Si-C Powder Compacts

<table>XRD patterns of SiC-Si-C ceramics at Si/C ratio 1 and 4 by using <i>μ</i>-SiC powders. C powder content of 5 wt.%, RS temperature of 1400°C, and RS time of 4 h were used.</table>

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Figure 10

Figure 10: Densification and Microstructural Evolutions during Reaction Sintering of SiC-Si-C Powder Compacts 