Research Article

Densification and Microstructural Evolutions during Reaction Sintering of SiC-Si-C Powder Compacts

Figure 7

Microstructure of SiC-Si-C specimens by using μ-SiC powders at Si amount of (a) 5, (b) 10, and (c) 20 wt.%. Compacts with Si/C ratio of 1 were reaction-bonded at 1400°C for 4 h.
763296.fig.007a
(a)
763296.fig.007b
(b)
763296.fig.007c
(c)