Table of Contents
ISRN Materials Science
Volume 2011, Article ID 823237, 6 pages
http://dx.doi.org/10.5402/2011/823237
Research Article

DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

1Department of Physics, Rajshahi University of Engineering & Technology, Rajshahi 6204, Bangladesh
2Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh

Received 27 March 2011; Accepted 17 April 2011

Academic Editor: B. Luan

Copyright © 2011 M. S. Hossain et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.