Table of Contents
ISRN Nanotechnology
Volume 2011, Article ID 907390, 7 pages
Review Article

Femtosecond Laser Induced Nanowire Technique and Its Applications

1Institute for Solid State Physics, University of Tokyo, Chiba 277-8581, Japan
2Department of Ophthalmology and Advanced Laser Medical Center, Faculty of Medicine, Saitama Medical University, Saitama 350-0495, Japan
3State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
4Kansai Photon Science Institute, Japan Atomic Energy Agency, Kyoto 619-0215, Japan

Received 17 March 2011; Accepted 18 April 2011

Academic Editor: A. W. Mohammad

Copyright © 2011 Motoyoshi Baba et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Semiconductor nanowires are very attractive due to their interesting fundamental properties and enormous potentials for device applications to the nanoscale optoelectronics and solar cells, and so forth. We fabricated semiconductor nanowires of various wire parameters such as wire length, diameter, and density by femtosecond laser induced method. We report the development of our technology of creating semiconductor nanowires with smaller size than the laser wavelength at precise position by femtosecond laser ablation technique. There are a variety of growth methods for nanowires including chemical vapor deposition (CVD), molecular-beam epitaxy (MBE), and pulsed laser deposition (PLD). Although PLD has recently been applied as a growth method for nanowires, laser induced nanowires are very good in quality. Their growth rate is much higher than that of nanowires grown by other ways. We discuss the growth mechanism of laser induced nanowires and describe the advantages of this approach.