Table of Contents
ISRN Thermodynamics
Volume 2012 (2012), Article ID 108781, 8 pages
http://dx.doi.org/10.5402/2012/108781
Research Article

Thermodynamics and Oxidation Behaviour of Crystalline Silicon Carbide (3C) with Atomic Oxygen and Ozone

Raman Centre for Applied and Interdisciplinary Sciences, 16A Jheel Road, Calcutta 700 075, India

Received 23 September 2012; Accepted 16 October 2012

Academic Editors: Y. Fang, T. M. Inerbaev, and G. Polidori

Copyright © 2012 Chandrika Varadachari et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Chandrika Varadachari, Ritabrata Bhowmick, and Kunal Ghosh, “Thermodynamics and Oxidation Behaviour of Crystalline Silicon Carbide (3C) with Atomic Oxygen and Ozone,” ISRN Thermodynamics, vol. 2012, Article ID 108781, 8 pages, 2012. doi:10.5402/2012/108781