Thermodynamics and Oxidation Behaviour of Crystalline Silicon Carbide (3C) with Atomic Oxygen and Ozone

Table 2

Equilibrium O, O₃ pressures for oxidation of SiC, Si, and C.

Reaction	1000 K		2000 K		3000 K
	log𝑃O	log𝑃O3	log𝑃O	log𝑃O3	log𝑃O	log𝑃O3
1	−23.66	−52.61	−9.05	−24.89	−4.20	−15.77
2	−18.22	−36.30	−9.63	−26.64	−6.67	−23.17
3	−24.87	−56.24	−10.04	−27.88	−5.13	−18.54
4	−27.17	−63.15	−9.74	−26.97	−4.01	−15.20
5	−18.82	−38.11	−8.44	−23.07	−4.92	−17.94
6	−16.18	−30.17	−8.61	−23.60	−5.98	−21.11
7	−18.44	−36.95	−7.72	−20.92	−4.29	−16.05
8	−16.85	−32.19	−9.38	−25.89	−7.15	−24.62
9	−19.59	−40.41	−9.88	−27.39	−6.18	−21.72
10	−28.88	−68.27	−10.37	−28.87	−4.11	−15.50
11	−20.26	−42.43	−10.65	−29.69	−7.36	−25.23
12	−20.14	−42.07	−8.35	−22.81	−4.40	−16.35