Effect of Excess Silicon on the Formation of Ti₃SiC₂ Using Free Ti/Si/C Powders Synthesized via Arc Melting

Table 1

Details of excess Si and arcing parameters.

Stage	Number of sample	Reactant	Excess Si (x)	Arcing parameters
				I (A)	t (s)
	1	3Ti + Si + 2C	0	90	3
	2	3Ti + Si + 2C	0	90	5
	3	3Ti + Si + 2C	0	90	10
	4	3Ti + Si + 2C	0	90	15
1	5	3Ti + Si + 2C	0	90	30
	6	3Ti + Si + 2C	0	90	45
	7	3Ti + Si + 2C	0	90	60
	8	3Ti + Si + 2C	0	90	75
	9	3Ti + Si + 2C	0	90	90
2	10	3Ti + Si + 2C	0	90
	11	3Ti + 1.1Si + 2C	1.1	90
	12	3Ti + 1.15Si + 2C	1.15	90	Optimum time as
	13	3Ti + 1.2Si + 2C	1.2	90	obtained in stage 1
	14	3Ti + 1.25Si + 2C	1.25	90	(denoted as 𝑡1)
	15	3Ti + 1.3Si + 2C	1.3	90
	16	3Ti + 1.4Si + 2C	1.4	90
	17	3Ti + 1.5Si + 2C	1.5	90