Effect of Excess Silicon on the Formation of Ti₃SiC₂ Using Free Ti/Si/C Powders Synthesized via Arc Melting

Table 2

Results obtained by different arcing parameters.

Stage	No.	Reactant	Arcing parameters		Phases detected (weight fraction, wt%)								Lattice parameters Ti3SiC2
			I (A)	t (s)	Ti3SiC2	TiC	Ti5Si3	TiSi2	Ti	C	𝑅exp	S	a = b (́Å)	c (́Å)
	1	3Ti + Si + 2C	90	3	50.1	27.6	22.3	—	—	—	10.378	2.412	3.0660	17.6300
	2	3Ti + Si + 2C	90	5	62.2	37.8	—	—	—	—	11.418	2.068	3.0715	17.6900
	3	3Ti + Si + 2C	90	10	55.7	34.0	10.7	—	—	—	10.236	2.476	3.0786	17.6849
	4	3Ti + Si + 2C	90	15	53.3	30.0	10.3	—	—	—	12.638	2.327	3.0669	17.6640
1	5	3Ti + Si + 2C	90	30	54.0	23.1	—	12.3	—	—	10.171	3.380	3.0666	17.6406
	6	3Ti + Si + 2C	90	45	42.7	33.1	24.3	—	—	—	11.077	2.285	3.0679	17.6440
	7	3Ti + Si + 2C	90	60	35.7	56.9	7.4	—	—	—	11.558	2.676	3.0680	17.6690
	8	3Ti + Si + 2C	90	75	29.4	57.8	—	4.2	1.8	0.2	12.423	2.188	3.0694	17.6775
	9	3Ti + Si + 2C	90	90	23.1	60.4	13.7	—	2.7	—	12.004	1.976	3.0644	17.6505