Research Article  Open Access
Structural and Electronic Properties of Pure Ta, TaNO, and TaZrNO with Ab Initio Calculations
Abstract
This paper presents the results of selfconsistent firstprinciple calculations for the crystal structure and electronic structure of pure tantalum, TaNO, and TaZrNO within density functional theory (DFT) for the sake of comparison and shows the influence of allowing elements on the interatomic distance and the Fermi level. The large total densities of states (TDOS) value for TaZrNO implies the highest electronic conductivity. The difference in values is due to the Zr metallic atoms presence in TaZrNO compound. There is a strong interaction between Ta and (N, O) (, ) in TaON compound, and Zr presence increases this interaction (, ) in TaZrON compound.
1. Introduction
The elemental tantalum Ta crystallizes in three crystalline phases, bccTa (αphase), f.c.cTa, and a new phase which is now generally referred to as tantalum. The discoverers of the tetragonal tantalum Ta (a metastable phase), in 1965 are Read and Altman [1]. It has been attracting much interest in most applications because of its high resistivity (170–210 ) [2–5]. It is preferred for fabricating capacitors and resistors. The chemical stability and robust mechanical properties of Ta make it a particularly desirable material. Numerous crystal structures have been reported for Ta. A tetragonal unit cell Ta was proposed by Read and Altman [1] Das [6] proposed a bccbased superlattice structure, while Burbank [7] proposed a hexagonal hcp structure and uranium model that was also proposed by Arakcheeva et al. [8, 9] on the basis of Xray diffraction (XRD) study on single crystals of Ta produced through electrolytic crystallization, and in the end, the anomalous f.c.cTa structure was observed in very thin films of tantalum [10, 11].
On the other hand, nitride formation is common to most transition elements. Many compositional and structural forms exist, with many transition elements forming several different nitride phases. In many of these compounds, nitrogen atoms occupy interstitial lattice sites because they are smaller than the metal atoms. For this reason, they are often referred to as interstitial compounds. Transition metal nitrides are refractory metals that possess technologically useful properties including superconductivity and ultrahigh hardness, and they combine various physical and chemical properties, such as high melting points (around 3000°C). They also possess electronic and magnetic properties that make them useful as electronic and magnetic components and as superconductors [12].
Although monometallic nitrides have been the object of considerable studies [13–15], bimetallic transition metal nitrides have attracted only limited attention. Van Dover et al. [16] investigated the Ternary TransitionMetal Nitride YNbN and GdCrN Systems by reactive sputtering, providing evidence for a new superconducting (Nb,Y) N solid solution.
Similarly, the literature on oxynitrides has been scarce. Oxynitrides of transition metals are a new exciting class of materials [17] that possess interesting refractory behaviour, higher elastic modulus, and hardness. They also offer great potential for their optical properties and recently have received much attention because of their potential use as pigment materials [18]. It has been known that oxygen atoms can substitute nitrogen atoms in monometallic nitrides due to the similarity in their radius. In many of the oxynitrides compounds, the N and O atoms are found in interstitial lattice positions in between the metal atoms. For this reason, their phases can exist over broad composition ranges with appreciable vacancy concentrations (both metal and nonmetal) and their physical properties are quite sensitive to composition. Yashima et al. [19] investigate neutron diffraction for confirmation of anion ordering and synchrotron powder diffraction for highprecision analysis of the crystal structure and electron density of an active TaON photocatalyst sample under visiblelight excitation. Yashima et al. [20] employ the density functional theory (DFT) for theoretical calculations of the electron density distribution and partial density of states of TaON compound.
Our primary aim was therefore to present the results of a theoretical investigation of the structural and electronics of metastable Ta, bccTa, and f.c.cTa. The bccTa ((f.c.cTa)) structures are cubic; the space group is Im3 m (no.229) (Fm3 m (no.225)) with two (four) formula units per unit cell, the metastable Ta (uranium, Distorted A15, and Hexagonal) structures are (tetragonal P4_{2}/mnm (no.136), distorted Pm(3)m (no.223), and hexagonal P6_{3}/mmc (no.194)). The bimetal (monometal) transition metal oxynitride TaZrNO (TaNO) structures are hexagonal (cubic), and the space group is (no.187) ( (no.216)) with one (four) formula unit(s) per unit cell. Until now, there has been no report on the electronic properties of pure tantalum, TaNO, and TaZrNO.
This paper presents the results of selfconsistent firstprinciples calculations for the crystal structure and electronic structure of pure tantalum, TaNO, and TaZrNO within DFT for the sake of comparison and shows the influence of allowing elements on the interatomic distance and the Fermi level.
The paper is organized as follows. The computational method is described in Section 2. In Section 3, the results are presented and compared with available experimental and theoretical data. Conclusion is given in Section 4.
2. Computational Method
All calculations were performed by using the CASTEP (Cambridge Serial Total Energy Package) simulation program [21] that solves the Schrodingerlike KohnSham equations according to the formalism of the density functional theory (DFT) [22, 23]. We used the Generalized Gradient Approximation (GGA) and a PerdewBurkeErnzerhof (PBE) scheme [24] for handling the electronic exchangecorrelation potential energy. Also, the pseudopotentials constructed using the ab initio norm conserving scheme describe the valence electron interaction with the atomic core, in which the Ta (), Zr (), N (), and O () orbitals are treated as valence electrons. Using for all structures high cutoff energy (280 eV) even at the price of spending long computational time is the condition to obtain accurate results. Brillouin zone (BZ) sampling is carried out using a MonkhorstPack mesh set [25]. For Ta (distorted A15) and hexagonal (type Cd or Zn) structures, the BZ sampling is carried out using a MonkhorstPack mesh and a cutoff energy of (280 eV). Atomic positions are relaxed and optimized within a density mixing scheme, based on a Conjugate Gradient (CG) method for eigenvalues minimization. Actually, the equilibrium lattice parameter is determined from a structural optimization, using the BroydenFletcherGoldfarbShenno (BFGS) minimization technique. This technique provides a fast way of finding the lowest energy structure, with the following thresholds for converged structures: (i) energy change per atom less than eV, (ii) residual force less than 0.05 eV/Å, (iii) atom displacement during geometry optimization less than 0.002 Å, and (iv) maximum stress within 0.1 GPa. The crystal structures of Ta: uranium, Ta: Distorted A15 structure, and TaZrNO structure are given in (Figures 1, 2, and 3).
3. Results and Discussion
3.1. Structural Properties
Results for the lattice parameter , and are reported (Table 1) and compared with experimental and theoretical calculations. Our calculated GGA values for for pure tantalum are in good agreement with the experimental data [1, 3, 7]. We have obtained the same value for of TaNO as experimental [26] one. For TaZrNO, our computed lattice constant () is bigger than the experimental one, within 7.4% [27]. Also, for both structures, the calculated lattice parameter ratio (0.523, 1.978, and 1.792 for0020βuranium, distorted A15, and hexagonal, resp.) is in reasonable accord with the previously considered data (0.531, 1.860, and 1.890, [1, 7, 28–31] and 1.098 for TaZrNO that is also in reasonable accord with of 1.064) [27]. In order to attempt an understanding the interatomic distances of the various compounds, we have found excellent agreement between our calculated and available experiment interatomic distances for different phases of pure tantalum. The results of distances are reported in Table 1.

3.2. Electronic Structures
Density of states and electronic band structure often provide sufficient information for a thorough characterization of the electronic properties of the material. Total density of states (DOS) of all βTa (metastable phase), αTa, and f.c.cTa structures were calculated in order to understand differences in the chemical bonding between them. The DOS for βTa structure, shown in Figures 4 and 5, is concentrated in two peaks. The low energy peak, between –9 and −3 eV (the zero of energy is taken at the Fermi energy ), is comprised mostly of and states. The other broad peak, lying at and above , has character with small admixture of characters and is responsible for the N() of 26.024 and 18.268 states/eVÅ^{3} for βuranium and distorted A15 models, respectively. For the hexagonal model, the DOS is mainly due to the states, with small characters at around −5 and 10 eV (Figure 6). Figures 7 and 8 shows respectively the density of states for αTa and fccTa that are mainly dominated by states and little contributions especially around −5 eV. Both structures are metallic because of the finite DOS at the Fermi level (). The DOS values at of all structures are shown in Table 2. Let us mention a large DOS at the Fermi level; this implies a high electronic conductivity and various applications to electronic conductors. Figures 9 and 10 show the total density of states (TDOS) and partial density of states (PDOS) for TaNO and TaZrNO compounds. The TDOS of TaNO (TaZrNO) can be mainly distributed in the following three energy regions in the valence bonding region.(1)In the region one from approximately −26 eV to −23 eV (−25 eV to −22 eV). In this region, the DOS mainly consists of orbitals of O, together with a small portion of orbitals of Ta ( orbitals of O, together with a small portion of orbitals of Ta and Zr). These states represent the electronic core structures;(2)In region two, it is from −18.0 eV to −16.0 eV (−19 eV to −17 eV). In this region, the DOS is contributed mainly from the hybridized orbitals of N, orbitals of Ta, together with a small portion of orbitals of Ta for TaNO, and the same behavior is observed for TaZrNO compounds;(3)In region three; it is from −14 eV to 0 eV (−12 eV to 0 eV). This is due to the O, N, and Ta orbitals (O, N, Ta, and Zr with a small portion of Ta and Zr contributions). Above the Fermi energy level, the DOS is predominated by Ta and N orbitals with a small portion of O contribution (Ta, Zr, N, and O orbitals with a small portion of Ta and Zr contributions), corresponding to the electronic antibonding states. The two TDOS have some similarities, however, in Figures 9 and 10.

(a)
(b)
(c)
(d)
(a)
(b)
(c)
(d)
(e)
TDOS at the Fermi level is 1.493 for TaNO.
TDOS at the Fermi level is 2.010 for TaZrNO, and the large value for TaZrNO implies the highest electronic conductivity.
The difference in values is due to the Zr metallic atoms presence in TaZrNO compound.
The pure tantalum has the highest (), and generally speaking, the smaller the () is, the unstable the compound will be.
3.2.1. Bond Orders between Atoms
Bond order is the overlap population of electrons between atoms, and this is a measure of the strength of the covalent bond between atoms. If the overlap population is positive (+), a bondingtype interaction is operating between atom, whereas if it is negative (−), an antibondingtype interaction is dominant between atoms. It is apparent that the bondingtype interactions are operating between the metal M () ( and ) and the nonmetal (N, O) 3 electrons. Thus, there is a strong interaction between Ta and (N, O) (–, –) in TaON compound, and Zr presence increases this interaction (–, –) in TaZrON compound.
4. Summary and Conclusion
Using the first principles based on the DFT, we studied the total (partial) density of states TDOS (PDOS) of pure tantalum, TaNO, and TaZrNO. The large value for TaZrNO implies the highest electronic conductivity. The difference in values is due to the Zr metallic atoms presence in TaZrNO compound. A bondingtype interaction is operating between atoms, and thus there is a strong interaction between Ta and (N, O) (–, –) in TaON compound, and Zr presence increases this interaction (–, –) in TaZrON compound.
References
 M. H. Read and C. Altman, “A new structure in tantalum thin films,” Applied Physics Letters, vol. 7, no. 3, article 51, 2 pages, 1965. View at: Publisher Site  Google Scholar
 N. Schwartz, W. A. Reed, P. Polash, and M. H. Read, “Temperature coefficient of resistance of betatantalum films and mixtures with b.c.c.tantalum,” Thin Solid Films, vol. 14, no. 2, pp. 333–346, 1972. View at: Google Scholar
 P. N. Baker, “Preparation and properties of tantalum thin films,” Thin Solid Films, vol. 14, no. 1, pp. 3–25, 1972. View at: Google Scholar
 A. Schauer and M. Roschy, “R.F. sputtered βtantalum and b.c.c. tantalum films,” Thin Solid Films, vol. 12, no. 2, pp. 313–317, 1972. View at: Google Scholar
 Y. Chouan and D. Collobert, “Plasma influence in tantalum sputtering,” Journal of Applied Physics, vol. 48, no. 6, pp. 2274–2279, 1977. View at: Publisher Site  Google Scholar
 G. Das, “A new structure of sputtered tantalum,” Thin Solid Films, vol. 12, no. 2, pp. 305–311, 1972. View at: Google Scholar
 R. D. Burbank, “Xray study of βtantalum,” Journal of Applied Crystallography, vol. 6, no. 3, pp. 217–224, 1973. View at: Publisher Site  Google Scholar
 A. Arakcheeva, G. Chapuis, and V. Grinevitch, “The selfhosting structure of βTa,” Acta Crystallographica Section B, vol. 58, no. 1, pp. 1–7, 2002. View at: Publisher Site  Google Scholar
 A. Arakcheeva, G. Chapuis, H. Birkedal, P. Pattison, and V. Grinevitch, “The commensurate composite σstructure of βtantalum,” Acta Crystallographica Section B, vol. 59, no. 3, pp. 324–336, 2003. View at: Publisher Site  Google Scholar
 R. B. Marcus and S. Quingley, “Formation of f.c.c., b.c.c. and βtantalum films by evaporation,” Thin Solid Films, vol. 2, no. 56, pp. 467–477, 1968. View at: Publisher Site  Google Scholar
 P. N. Dendigh and R. B. Marcus, “Structure of very thin tantalum and molybdenum films,” Journal of Applied Physics, vol. 37, no. 12, article 4325, 6 pages, 1966. View at: Publisher Site  Google Scholar
 T. H. Geballe, B. T. Matthias, J. P. Remeika et al., Physics (Long Island City, N.Y.), vol. 2, p. 293, 1966.
 D. A. Papaconstantopoulos, W. E. Pickett, B. M. Klein, and L. L. Boyer, “Electronic properties of transitionmetal nitrides: the groupV and groupVI nitrides VN, NbN, TaN, CrN, MoN, and WN,” Physical Review B, vol. 31, no. 2, pp. 752–761, 1985. View at: Publisher Site  Google Scholar
 C. Stampfl, W. Mannstadt, R. Asahi, and A. J. Freeman, “Electronic structure and physical properties of early transition metal mononitrides: densityfunctional theory LDA, GGA, and screenedexchange LDA FLAPW calculations,” Physical Review B, vol. 63, no. 15, Article ID 155106, 11 pages, 2001. View at: Publisher Site  Google Scholar
 P. Ojha, M. Aynyas, and S. P. Sanyal, “Pressureinduced structural phase transformation and elastic properties of transition metal mononitrides,” Journal of Physics and Chemistry of Solids, vol. 68, no. 2, pp. 148–152, 2007. View at: Publisher Site  Google Scholar
 R. B. van Dover, B. Hessen, D. Werder, C. H. Chen, and R. J. Felder, “Investigation of ternary transitionmetal nitride systems by reactive cosputtering,” Chemistry of Materials, vol. 5, no. 1, pp. 32–35, 1993. View at: Google Scholar
 T. Das, “Oxynitride glasses—an overview,” Bulletin of Material Science, vol. 23, no. 6, pp. 499–5047, 2000. View at: Publisher Site  Google Scholar
 E. Guenther and M. Jansen, “Optical properties of Ta_{(3x)}Zr_{(x)}N_{(5x)}O_{(x)} semiconductor pigments,” Materials Research Bulletin, vol. 36, no. 78, pp. 1399–1405, 2001. View at: Publisher Site  Google Scholar
 M. Yashima, Y. Lee, and K. Domen, “Crystal structure of tantalum oxynitride TaON, a visible light responsive photocatalyst,” Experimental Reports, vol. 15, no. 395, 2008. View at: Google Scholar
 M. Yashima, Y. Lee, and K. Domen, “Crystal structure and electron density of tantalum oxynitride, a visible light responsive photocatalyst,” Chemistry of Materials, vol. 19, no. 3, pp. 588–593, 2007. View at: Publisher Site  Google Scholar
 M. D. Segall, P. J. D. Lindan, M. J. Probert et al., “Firstprinciples simulation: ideas, illustrations and the CASTEP code,” Journal of Physics Condensed Matter, vol. 14, no. 11, pp. 2717–2744, 2002. View at: Publisher Site  Google Scholar
 P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Physical Review, vol. 136, no. 3, pp. B864–B871, 1964. View at: Publisher Site  Google Scholar
 W. Kohn and L. J. Sham, “Selfconsistent equations including exchange and correlation effects,” Physical Review, vol. 140, no. 4, pp. A1133–A1138, 1965. View at: Google Scholar
 J. P. Perdew, S. Burke, and M. Ernzerhof, “Generalized gradient approximation made simple [Phys. Rev. Lett. 77, 3865 (1996)],” Physical Review Letters, vol. 78, no. 7, article 1396, 1997. View at: Publisher Site  Google Scholar
 H. J. Monkhorst and J. D. Pack, “Special points for Brillouinzone integrations,” Physical Review B, vol. 13, no. 12, pp. 5188–5192, 1976. View at: Publisher Site  Google Scholar
 H. Wolff, H. Schilling, M. Lerch, and R. Dronskowski, “A densityfunctional and moleculardynamics study on the physical properties of yttriumdoped tantalum oxynitride,” Journal of Solid State Chemistry, vol. 179, no. 8, pp. 2265–2270, 2006. View at: Publisher Site  Google Scholar
 N. Schonberg, “The structure of the metallic quaternary phase ZrTaNO,” Acta Chemica Scandinavica, vol. 8, pp. 627–629, 1954. View at: Publisher Site  Google Scholar
 P. T. Moseley and C. J. Seabrook, “The crystal structure of βtantalum,” Acta Cryst B, vol. 29, no. 5, pp. 1170–1171, 1973. View at: Publisher Site  Google Scholar
 A. C. Lawson and C. R. Olsen, “Structure of βuranium,” Acta Cryst B, vol. 44, no. 2, pp. 89–96, 1988. View at: Publisher Site  Google Scholar
 P. Catania, R. A. Roy, and J. J. Cuomo, “Phase formation and microstructure changes in tantalum thin films induced by bias sputtering,” Journal of Applied Physics, vol. 74, no. 2, pp. 1008–1014, 1993. View at: Publisher Site  Google Scholar
 D. Mills, Journal of the CanadianCeramic Society, vol. 35, p. 48, 1966.
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