International Scholarly Research Notices / 2012 / Article / Fig 11

Research Article

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Figure 11

(a) Temperature-dependent variations of BELIV current transients in heavily (1014 and 1016 n/cm2) irradiated Si pin diode. (b) Temperature and bias illumination-dependent variations of the BELIV current transients.
543790.fig.0011a
(a)
543790.fig.0011b
(b)

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