International Scholarly Research Notices / 2012 / Article / Fig 12

Research Article

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

Figure 12

(a) A family of transients, measured by varying LIV pulse ramp, fitted by simulated ones, when minimum for least-square deviations between simulated and experimental transients has been obtained. The set of parameters π‘ˆ 𝑏 𝑖 , 𝑁 D e f and 𝜏 𝑔 has been simultaneously extracted by this fitting procedure. The extracted values are denoted within a legend. (b) Comparison of the fluence dependent variations of the barrier capacitance 𝐢 𝑏 0 measured by BELIV technique employing both reverse (stars) and forward (crosses) LIV pulses at 𝑇 = 3 0 0  K. Values of 𝐢 𝑏 0 obtained for nonirradiated Si diodes of different technology are also shown in (b).
543790.fig.0012a
(a)
543790.fig.0012b
(b)

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.